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IRF6613TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6613TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF6613TRPBF?> डेटा पत्रक पीडीएफ

IRF6613TRPBF pdf
IRF6613PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
93
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
38
2.6
3.1
–––
-5.8
–––
–––
–––
–––
–––
42
11.5
3.3
12.6
14.6
15.9
22
18
47
27
4.9
5950
990
460
Max. Units
Conditions
–––
–––
3.4
4.1
2.25
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 23A g
VGS = 4.5V, ID = 18A g
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
63
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 18A
––– VDS = 20V
––– nC VGS = 4.5V
––– ID = 18A
––– See Fig. 6 and 16
–––
––– nC VDS = 16V, VGS = 0V
––– VDD = 16V, VGS = 4.5V g
––– ID = 18A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) e
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
38
42
Max. Units
Conditions
110 MOSFET symbol
D
A showing the
180 integral reverse G
p-n junction diode.
S
1.0 V TJ = 25°C, IS = 18A, VGS = 0V g
57 ns TJ = 25°C, IF = 18A
63 nC di/dt = 100A/µs g
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ Starting TJ = 25°C, L = 1.2mH, RG = 25, IAS = 18A.
… Pulse width 400µs; duty cycle 2%.
† Surface mounted on 1 in. square Cu board.
‡ Used double sided cooling, mounting pad.
ˆ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‰ TC measured with thermal couple mounted to top (Drain) of part.
Š Rθ is measured at TJ of approximately 90°C.
2 www.irf.com
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