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IRF6609TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF6609TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF6609TRPBF pdf
IRF6609PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C Reference to 25°C, ID = 1mA
gStatic Drain-to-Source On-Resistance ––– 1.6 2.0 mVGS = 10V, ID = 31A
––– 2.0 2.6
gVGS = 4.5V, ID = 25A
Gate Threshold Voltage
1.55 ––– 2.45 V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– -6.1 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance 91 ––– ––– S VDS = 10V, ID = 25A
Qg Total Gate Charge
––– 46 69
Qgs1
Pre-Vth Gate-to-Source Charge
––– 15 –––
VDS = 10V
Qgs2
Post-Vth Gate-to-Source Charge
––– 4.7 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 15 –––
ID = 17A
Qgodr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
––– 11 –––
––– 20 –––
See Fig. 16
Qoss
td(on)
tr
Output Charge
Turn-On Delay Time
Rise Time
––– 26 ––– nC VDS = 10V, VGS = 0V
––– 24 –––
ÃgVDD = 16V, VGS = 4.5V
––– 95 –––
ID = 25A
td(off)
Turn-Off Delay Time
––– 26 ––– ns Clamped Inductive Load
tf Fall Time
Ciss Input Capacitance
––– 9.8 –––
––– 6290 –––
VGS = 0V
Coss Output Capacitance
––– 1850 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 860 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
fEAS (Thermally limited) Single Pulse Avalanche Energy
ÃeIAR Avalanche Current
eEAR Repetitive Avalanche Energy
Diode Characteristics
Typ.
–––
–––
–––
Max.
240
See Fig. 12, 13, 18a,
18b,
Units
mJ
A
mJ
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 89
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ãe(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 250
––– 0.80 1.2
––– 32 48
––– 26 39
integral reverse
G
p-n junction diode.
S
gV TJ = 25°C, IS = 25A, VGS = 0V
ns TJ = 25°C, IF = 25A
gnC di/dt = 100A/µs
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International Rectifier


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