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2SC2383 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN EPITAXIAL SILICON TRANSISTOR - UTC

भाग संख्या 2SC2383
समारोह NPN EPITAXIAL SILICON TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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2SC2383 pdf
2SC2383
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC 1 A
Base Current
IB 0.5 A
Collector Power Dissipation
Pc
900 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
„ hFE CLASSIFICATION
SYMBOL
ICBO
IEBO
BVCEO
hFE
VCE(sat)
VBE(on)
fT
Cob
TEST CONDITIONS
VCE=150V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
VCE=5V, IC=200mA
IC=500mA, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=200mA
VCB=10V, IE =0, f=1MHz
MIN TYP MAX UNIT
1 µA
1 µA
160 V
60 320
1.5 V
0.45 0.75 V
20 100
MHz
20 pF
CIASSIFICATION
hFE
R
60~120
O
100-200
Y
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-086.a
Free Datasheet http://www.Datasheet4U.com

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