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MXP6006DF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (MXP6006DT / MXP6006DF) 60V N-Channel MOSFET - MaxPower

भाग संख्या MXP6006DF
समारोह (MXP6006DT / MXP6006DF) 60V N-Channel MOSFET
मैन्युफैक्चरर्स MaxPower 
लोगो MaxPower लोगो 
पूर्व दर्शन
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<?=MXP6006DF?> डेटा पत्रक पीडीएफ

MXP6006DF pdf
OFF Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
V(BR)DSS Drain-to-Source Breakdown Voltage
60
-
-V
IDSS Drain-to-Source Leakage Current
-
-
-
-
1
100
uA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-
-
-
-
100
100
nA
Test Conditions
VGS=0V, ID=250uA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, TJ=125
VGS=+20V
VGS= -20V
ON Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
RDS(ON) Static Drain-to-Source On-Resistance
-
4.6 6.0 m
VGS(th) Gate Threshold Voltage.
2 - 4V
Test Conditions
VGS=10V, ID=24A
VGS=VDS, ID=250uA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Essentially independent of operating temperature
Min Typ Max Unit
Test Conditions
- 5117
- 534
-
-
pF
VGS=0V, VDS=25V,
f=1.0MHz
- 185
-
- 68
-
- 25
- nC VDD=30V, ID=57A, VGS=10V
- 16
-
- 18
-
- 43
- 46
-
-
nS
VDD=30V, ID=57A,
VG=10V, RG=2.5
- 13
-
Source-Drain Diode CharacteristicsTJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Unit
VSD Diode Forward Voltage
- - 1.2 V
Trr Reverse Recovery Time
- - 108.3 nS
Qrr Reverse Recovery Charge
- - 85.4 nC
Test Conditions
IS=24A, VGS=0V
Is=38A, di/dt=100A/μs
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
Page2
All Rights Reserved.
MXP6006DT Ver 1.0 Sep. 2011
Free Datasheet http://www.Datasheet4U.com

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डाउनलोड[ MXP6006DF Datasheet.PDF ]


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