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IRG7PH44K10D-EPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG7PH44K10D-EPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG7PH44K10D-EPBF pdf
  IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
ICES Collector-to-Emitter Leakage Current
IGES Gate-to-Emitter Leakage Current
VF   Diode Forward Voltage Drop  
1200
5.0
0.80
1.9
2.4
-15
16
1.0
1200
2.5
2.4
2.4
7.5
35
±100
3.3
V VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
V IC = 25A, VGE = 15V, TJ = 25°C
IC = 25A, VGE = 15V, TJ = 150°C
V VCE = VGE, IC = 1.2mA
mV/°C VCE = VGE, IC = 1.2mA (25°C-150°C)
S VCE = 50V, IC = 25A, PW = 20µs
µA VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
nA VGE = ±30V
V IF = 8.0A
IF = 8.0A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. MaxUnits
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA  
Erec
trr
Irr
Short Circuit Safe Operating Area  
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 135 200
— 30 45
— 65 100
— 2.1 3.0
— 1.3 2.2
— 3.4 5.2
— 75 95
— 50 70
— 315 340
— 95 115
— 2.8 —
— 2.2 —
— 5.0 —
— 60 —
— 55 —
— 340 —
— 250 —
— 3050 —
— 145 —
— 80 —
FULL SQUARE
10     
— 190 —
— 130 —
— 13 —
IC = 25A
nC VGE = 15V
VCC = 600V
mJ   IC = 25A, VCC = 600V, VGE=15V
RG = 10, TJ = 25°C
Energy losses include tail & diode
ns  reverse recovery 
mJ  IC = 25A, VCC = 600V, VGE=15V
RG = 10, TJ = 150°C
Energy losses include tail & diode
ns reverse recovery  
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 100A
VCC = 960V, Vp 1200V
VGE = +20V to 0V
µs
 
TJ = 150°C,VCC = 600V, Vp 1200V
VGE = +15V to 0V
µJ TJ = 150°C
ns VCC = 600V, IF = 8A
A VGE = 15V, Rg = 10
Notes:
VCC = 80% (VCES), VGE = 20V.
Ris measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2 www.irf.com © 2013 International Rectifier
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November 4, 2013
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