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FDP51N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UniFET MOSFET - Fairchild Semiconductor

भाग संख्या FDP51N25
समारोह N-Channel UniFET MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP51N25?> डेटा पत्रक पीडीएफ

FDP51N25 pdf
Package Marking and Ordering Information
Part Number
FDP51N25
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
Top Mark
FDP51N25
FDPF51N25
FDPF51N25
FDPF51N25
Package
TO-220
TO-220F
TO-220F
(Y-formed)
TO-220F
(LG-formed)
Packing Method
Tube
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA, TJ = 25 ° C
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 25.5 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 25.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 51 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 200 V, ID = 51 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 51 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 51 A,
dIF/dt =100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.68 mH, IAS = 51 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25° C.
3. ISD 51 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25° C.
4. Essentially independent of operating temperature typical characteristics.
Min.
250
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max. Unit
-- -- V
0.25 -- V/°C
-- 1 μA
-- 10 μA
-- 100 nA
-- -100 nA
--
0.048
43
5.0
0.060
--
V
Ω
S
2620
530
63
3410
690
90
pF
pF
pF
62 135 ns
465 940 ns
98 205 ns
130 270 ns
55 70 nC
16 -- nC
27 -- nC
-- 51 A
-- 204 A
-- 1.4 V
178 -- ns
4.0 -- μC
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
2
www.fairchildsemi.com

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