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B1015 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SB1015 - Toshiba Semiconductor

भाग संख्या B1015
समारोह 2SB1015
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=B1015?> डेटा पत्रक पीडीएफ

B1015 pdf
2SB1015A
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = -60 V, IE = 0
IEBO
VEB = -7 V, IC = 0
V (BR) CEO IC = -50 mA, IB = 0
hFE (1)
(Note)
VCE = -5 V, IC = -0.5 A
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = -5 V, IC = -3 A
IC = -3 A, IB = -0.3 A
VCE = -5 A, IC = -0.5 A
VCE = -5 V, IC = -0.5 A
VCB = -10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
¾ ¾ -100 mA
¾ ¾ -100 mA
-60 ¾
¾
V
60 ¾ 200
20 ¾ ¾
¾ -0.5 -1.7
V
¾ -0.7 -1.0
V
¾ 9 ¾ MHz
¾ 150 ¾
pF
Turn-on time
ton
20 ms
Input IB1
Output
¾
0.4
¾
Switching time Storage time
Fall time
tstg IB2
VCC = -30 V
tf
-IB1 = IB2 = 0.2 A, duty cycle <= 1%
¾ 1.7 ¾ ms
¾ 0.5 ¾
Note: hFE (1) classification O: 60~120, Y: 100~200
Marking
B1015A
hFE classification (O/Y)
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04

विन्यास 4 पेज
डाउनलोड[ B1015 Datasheet.PDF ]


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