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NT5CB1024M4BN डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 4Gb DDR3 SDRAM B-Die - Nanya

भाग संख्या NT5CB1024M4BN
समारोह 4Gb DDR3 SDRAM B-Die
मैन्युफैक्चरर्स Nanya 
लोगो Nanya लोगो 
पूर्व दर्शन
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NT5CB1024M4BN pdf
4Gb DDR3 SDRAM B-Die
NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP
NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP
Description
The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing
4,294,967,296 bits. It is internally configured as an octal-bank DRAM.
The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These
synchronous devices achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks
(CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source
synchronous fashion.
These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA
packages.
REV 1.0
01/ 2012
2
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NT5CB1024M4BN4Gb DDR3 SDRAM B-DieNanya
Nanya


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