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3SK231 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOS FIELD EFFECT TRANSISTOR - NEC

भाग संख्या 3SK231
समारोह MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
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3SK231 pdf
3SK231
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Drain to Source Breakdown Voltage BVDSX
18
Drain Current
IDSx 0.01
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
VG1S(off)
VG2S(off)
1.0
+0.6
+1.1
Gate1 Reverse Current
Gate2 Reverse Current
IG1SS
IG2SS
Forward Transfer Admittance
yfs
15 19.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Ciss
Coss
Crss
Gps
NF1
1.0
0.7
14.0
1.5
1.0
0.015
17.5
2.0
MAX.
10.0
+1.0
+1.6
±20
±20
24
2.0
1.3
0.03
21.0
3.0
UNIT
V
mA
V
V
nA
nA
mS
pF
pF
pF
dB
dB
TEST CONDITIONS
VG1S = VG2S = 2 V, ID = 10 µA
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V
VDS = 6 V, VG2S = 3 V, ID = 10 µA
VDS = 6 V VG1S = 3 V, ID = 10 µA
VDS = VG2S = 0 V, VG1S = ±8 V
VDS = VG1S = 0 V, VG2S = ±8 V
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 kHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 900 MHz
 IDSX Classification
Rank
U1C/UAC *
U1D/UAD *
Marking
U1C
U1D
IDSX (mA)
0.01 to 4.0 2.0 to 10.0
* Old Specification / New Specification
2 Data Sheet PU10030EJ01V0DS
Free Datasheet http://www.Datasheet4U.com

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