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F11N60F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FCPF11N60F - Fairchild Semiconductor

भाग संख्या F11N60F
समारोह FCPF11N60F
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=F11N60F?> डेटा पत्रक पीडीएफ

F11N60F pdf
Package Marking and Ordering Information
Device Marking
FCP11N60F
FCPF11N60F
Device
FCP11N60F
FCPF11N60F
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS/
TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
VGS = 0 V, ID = 250 µA, TJ = 150°C
ID = 250 µA, Referenced to 25°C
VGS = 0 V, ID = 11 A
600
--
--
--
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5.5 A
(Note 4)
--
Ciss
Coss
Crss
Coss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
--
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 0V to 480 V, VGS = 0 V
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 11 A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 480 V, ID = 11 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
--
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ.
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
120
0.8
Max. Units
--
--
--
--
10
100
100
-100
V
V
V/°C
V
µA
µA
nA
nA
5.0
0.38
--
V
S
1490
870
82
--
--
pF
pF
pF
pF
pF
80 ns
205 ns
250 ns
120 ns
52 nC
-- nC
-- nC
11 A
33 A
1.4 V
-- ns
-- µC
FCP11N60F/FCPF11N60F Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/

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डाउनलोड[ F11N60F Datasheet.PDF ]


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