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W12NC60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STW12NC60 - STMicroelectronics

भाग संख्या W12NC60
समारोह STW12NC60
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=W12NC60?> डेटा पत्रक पीडीएफ

W12NC60 pdf
STW12NC60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
850
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 6A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.48
Max.
4
0.55
Unit
V
12 A
DYNAMIC
Symbol
Parameter
gfs Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =6A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
13
2150
275
39
Max.
Unit
S
pF
pF
pF
2/8
Free Datasheet http://www.datasheet4u.net/

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भाग संख्याविवरणविनिर्माण
W12NC60 STW12NC60STMicroelectronics
STMicroelectronics


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