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FDP10N60NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UniFET II MOSFET - Fairchild Semiconductor

भाग संख्या FDP10N60NZ
समारोह N-Channel UniFET II MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP10N60NZ?> डेटा पत्रक पीडीएफ

FDP10N60NZ pdf
Package Marking and Ordering Information
Part Number
FDP10N60NZ
FDPF10N60NZ
Top Mark
FDP10N60NZ
FDPF10N60NZ
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
600
-
-
0.6
-V
- V/oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
-
-
-
-
1
10
μA
- - ±10 μA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
3.0 - 5.0 V
- 0.64 0.75 Ω
- 14 - S
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, ID = 10 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
1110
130
10
23
6
8
1475
175
15
30
-
-
pF
pF
pF
nC
nC
nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 10 A,
VGS = 10 V, RG = 25 W
(Note 4)
-
-
-
-
25 60 ns
50 110 ns
70 150 ns
50 110 ns
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 11 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
- - 10 A
- - 40 A
- - 1.4 V
- 300 - ns
- 2.0 - μC
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/

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FDP10N60NZN-Channel UniFET II MOSFETFairchild Semiconductor
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