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BSX26 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-SPEED SATURATED SWITCH - STMicroelectronics

भाग संख्या BSX26
समारोह HIGH-SPEED SATURATED SWITCH
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=BSX26?> डेटा पत्रक पीडीएफ

BSX26 pdf
BSX26
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max 146 °C/W
Max 486 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICE S
V(B R)CBO
V(B R)CES
V(BR)CE O *
V(B R)E BO
VCE( sat )*
VBE( sat )*
hFE*
fT
CEBO
C CBO
Collector Cutoff Current
(VBE = 0)
Collector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (VBE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emitter-base Breakdown
Voltage (IC = 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
Transition Frequency
Emitter-base Capacitance
Collector-base Capacitance
VCE = 20 V
VCE = 20 V
IC = 100 µA
IC = 100 µA
IC = 10 mA
IE = 100 µA
IC = 30 mA
IC = 100 mA
IC = 300 mA
IC = 30 mA
T amb = 85 °C
IC = 30 mA
IC = 100 mA
IC = 300 mA
IC = 30 mA
IC = 100 mA
IC = 300 mA
I C = 30 mA
f = 100 MHz
IC = 0
f = 1 MHz
IE = 0
f = 1 MHz
T amb = 85 °C
IB = 3 mA
IB = 10 mA
IB = 30 mA
IB = 3 mA
IB = 3 mA
IB = 10 mA
IB = 30 mA
VCE = 0.4 V
VCE = 0.5 V
VCE = 1 V
VCE = 10 V
VEB = 0.5 V
VCB = 5 V
40
40
15
4
0.75
30
25
15
350
0.16
0.18
0.39
0.18
0.82
0.97
1.3
60
55
550
6.5
3.3
ts Storage Time
IC = 10 mA
VCC = 10 V
I B1 = – IB2 = 10 mA
to n**
Turn-on Time
IC = 300 mA
I B1 = 30 mA
VCC = 15 V
t o f f**
Turn-off Time
I C = 300 mA VCC = 15 V
I B1 = – IB2 = 30 mA
* Pulsed : pulse duration = 300µs, duty cycle = 1%
** See test circuit.
8
9
15
Max.
0.5
15
0.18
0.28
0.5
0.3
0.95
1.2
1.7
120
8
5
18
15
25
Unit
µA
µA
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
2/6
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