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FDA59N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 250V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDA59N25
समारोह 250V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDA59N25?> डेटा पत्रक पीडीएफ

FDA59N25 pdf
Package Marking and Ordering Information
Part Number
FDA59N25
Top Mark
FDA59N25
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 29.5 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 29.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 125 V, ID = 59 A
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 200 V, ID = 59 A
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 59 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 59 A,
dIF/dt =100 A/μs
Min.
250
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ. Max
--
0.25
--
--
--
--
--
--
1
10
100
-100
-- 5.0
0.041 0.049
45 --
3090
630
70
4020
820
110
70
480
90
170
63
18.5
30
150
970
190
350
82
--
--
-- 59
-- 236
-- 1.4
190 --
4.4 --
Unit
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.67 mH, IAS = 59 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 59 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. C2
2
www.fairchildsemi.com

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