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AO4892 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 100V Dual N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AO4892
समारोह 100V Dual N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AO4892?> डेटा पत्रक पीडीएफ

AO4892 pdf
AO4892
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
100
1.7
25
1
5
±100
2.35 2.8
56
104
74
12.5
0.78
68
126
94
1
2.5
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415
32
3
0.7 1.4 2.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=4A
3 6 nC
1.5 nC
Qgd Gate Drain Charge
1.5 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=12.5,
2
ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs
16 ns
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs
44 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov. 2012
www.aosmd.com
Page 2 of 6
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