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P5N50C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 5 Ampere 500 Volt N-Channel MOSFET - Thinki Semiconductor

भाग संख्या P5N50C
समारोह 5 Ampere 500 Volt N-Channel MOSFET
मैन्युफैक्चरर्स Thinki Semiconductor 
लोगो Thinki Semiconductor लोगो 
पूर्व दर्शन
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<?=P5N50C?> डेटा पत्रक पीडीएफ

P5N50C pdf
P5N50C
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
BVDSS Drain-Source Breakdown Voltage
ȟ BVDSS/ Breakdown Voltage Temperature
ȟ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS =10 V, ID = 2.65A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
VGS =0 V, VDS =25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
VDD =250V, ID =5.0A, RG =25 ˟
see fig. 13.
(Note 4, 5)
VDS =400V, VGS =10V, ID =5.3A
see fig. 12.
(Note 4, 5)
Min
500
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
--V
0.47 - V/°C
- 1 uA
- 10 uA
- 100 nA
-
-100
nA
- 4.0
1.2 1.5
V
˟
608 -
75 -
25 -
pF
16 42
49 108
60 130
49 108
18.5 23
4-
8-
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =5.3A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=5.3A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25mH, IAS =5.3A, VDD = 50V, RG = 50 ˟ , Starting TJ = 25°C
3. ISD ˺ 5.3A, di/dt ˺ 300A/us, VDD ˺ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ˺ 300us, Duty Cycle ˺ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
302
1.8
Max.
5.3
21.2
1.5
-
-
Unit.
A
V
ns
uC
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/6
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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