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GT20J341 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Discrete IGBTs Silicon N-Channel IGBT - Toshiba

भाग संख्या GT20J341
समारोह Discrete IGBTs Silicon N-Channel IGBT
मैन्युफैक्चरर्स Toshiba 
लोगो Toshiba लोगो 
पूर्व दर्शन
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<?=GT20J341?> डेटा पत्रक पीडीएफ

GT20J341 pdf
GT20J341
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 600 V
Gate-emitter voltage
VGES
±25
Collector current (DC)
(Tc = 25)
IC 20 A
Collector current (DC)
(Tc = 100)
IC 11
Collector current (pulsed)
ICP 80
Diode forward current (DC)
(Tc = 25)
IF 20
Diode forward current (DC)
(Tc = 100)
IF 9
Short circuit withstand time
(Note 1)
tsc
5 µs
Collector power dissipation
(Tc = 25)
PC 45 W
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: VCC = 300 V, VGG = +15 V/0 V, Tj 125
5. Thermal Characteristics
Characteristics
Junction-to-case thermal resistance (IGBT)
Junction-to-case thermal resistance (diode)
Symbol
Rth(j-c)
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25, unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Diode forward voltage
Diode forward voltage
Symbol
Test Condition
IGES
ICES
VGE(OFF)
VCE(sat)
VCE(sat)
VF
VF
VGE = ±25 V, VCE = 0 V
VCE = 600 V, VGE = 0 V
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V, Tc = 25
IC = 20 A, VGE = 15 V, Tc = 125
IF = 20 A, VGE = 0 V, Tc = 25
IF = 20 A, VGE = 0 V, Tc = 125
Min
3.5
Max Unit
2.78 /W
4.23
Typ. Max Unit
±100 nA
100 µA
5.5 6.5
V
1.5 2.0
1.8
1.5 2.1
1.3
2 2014-01-07
Rev.3.0

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