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FDP12N60NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDP12N60NZ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FDP12N60NZ?> डेटा पत्रक पीडीएफ

FDP12N60NZ pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP12N60NZ
Device
FDP12N60NZ
Package
TO-220
Reel Size
-
Tape Width
-
FDPF12N60NZ
FDPF12N60NZ
TO-220F
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125oC
VGS = ±30V, VDS = 0V
600
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 6A
VDS = 20V, ID = 6A
3
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 12A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 12A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 12A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 12A
dIF/dt = 100A/s
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
0.53
13.5
1260
150
12
26
6
10
25
50
80
60
-
-
-
350
2.2
Max. Unit
-V
- V/oC
1
A
10
±10 A
5V
0.65
-S
1676
200
18
34
-
-
pF
pF
pF
nC
nC
nC
60 ns
110 ns
170 ns
130 ns
12 A
48 A
1.4 V
- ns
- C
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =7.85mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FDP12N60NZ / FDPF12N60NZ Rev. C1
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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