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PJA138K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 50V N-Channel Enhancement Mode MOSFET - Pan Jit International

भाग संख्या PJA138K
समारोह 50V N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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PJA138K pdf
PPJA138K
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V,ID=250uA
VDS=VGS, ID=250uA
VGS=10V,ID=500mA
VGS=4.5V,ID=200mA
VGS=2.5V,ID=100mA
VDS=50V,VGS=0V
VGS=+20V,VDS=0V
VDS=25V, ID=250mA,
VGS=4.5V (Note 1,2)
VDS=25V, VGS=0V,
f=1.0MHZhttp://www.DataSheet4U.com/
VDD=25V, ID=500mA,
VGS=10V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=500mA, VGS=0V
MIN. TYP. MAX. UNITS
50 -
-
0.8 1.0 1.5
-
0.93
1.6
- 1.2 2.5
- 2.4 4.5
- 0.01 1
- +3.0 +10
V
V
uA
uA
- 0.63 1
- 0.2 - nC
- 0.23 -
- - 50
- - 10 pF
- -5
- 2.2 5
19.2
6.2
38
12
ns
- 23 50
- - 500 mA
0.86
1.5
V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
March 25,2013-REV.00
Page 2

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