DataSheet.in

GB200TS60NPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Ultrafast Speed IGBT - Vishay Siliconix

भाग संख्या GB200TS60NPBF
समारोह Ultrafast Speed IGBT
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=GB200TS60NPBF?> डेटा पत्रक पीडीएफ

GB200TS60NPBF pdf
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VGE = 15 V, IC = 200 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 100 A
IC = 200 A
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.95
2.6
2.28
3.14
4.2
0.005
0.01
1.39
1.64
1.32
1.67
-
MAX.
-
2.1
2.84
2.5
3.48
6
0.2
15
1.78
2.2
1.69
2.30
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 25 °C
IC = 200 A, VCC = 360 V, VGE = 15 V,
Rg = 10 Ω, L = 200 μH, TJ = 125 °C
TJ = 150 °C, IC = 400 A,
Rg = 27 Ω, VGE = 15 V to 0
TJ = 150 °C, VCC = 400 V, VP = 600 V,
Rg = 27 Ω, VGE = 15 V to 0
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 25 °C
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 125 °C
-
-
-
-
-
-
-
-
-
-
10
-
-
-
-
-
-
TYP.
3.65
6.9
10.55
3.8
7.8
11.6
507
133
538
92
Fullsquare
-
226
17
1900
290
25
3600
MAX.
-
-
-
-
-
-
-
-
-
-
-
260
20
2600
330
30
5000
UNITS
mJ
ns
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94503
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/

विन्यास 9 पेज
डाउनलोड[ GB200TS60NPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GB200TS60NPBFUltrafast Speed IGBTVishay Siliconix
Vishay Siliconix


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English