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GB100TS60NPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Ultrafast Speed IGBT - Vishay Siliconix

भाग संख्या GB100TS60NPBF
समारोह Ultrafast Speed IGBT
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
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GB100TS60NPBF pdf
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GB100TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 108 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
Gate to emitter leakage current
VFM
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 50 A
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150 °C
IC = 50 A
IC = 100 A
IC = 50 A, TJ = 125 °C
IC = 100 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
3
-
-
-
-
-
-
-
TYP.
-
1.95
2.6
2.21
3.05
4.6
0.01
3.7
1.35
1.57
1.27
1.57
-
MAX.
-
2.1
2.85
2.44
3.38
6
0.1
10
1.66
1.96
1.50
1.89
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon
Eoff
IC = 100 A, VCC = 360 V, VGE = 15 V,
Rg = 4.7 Ω, L = 200 μH, TJ = 25 °C
Etot
-
-
-
Turn-on switching loss
Eon
-
Turn-off switching loss
Eoff
-
Total switching loss
Turn-on delay time
Rise time
Etot
td(on)
tr
IC = 100 A, VCC = 360 V, VGE = 15 V,
Rg = 4.7 Ω, L = 200 μH, TJ = 125 °C
-
-
-
Turn-off delay time
td(off)
-
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
tf
RBSOA
SCSOA
trr
Irr
Qrr
trr
Irr
Qrr
TJ = 150 °C, IC = 200 A,
Rg = 27 Ω, VGE = 15 V to 0
TJ = 150 °C, VCC = 400 V, VP = 600 V,
Rg = 27 Ω, VGE = 15 V to 0
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 25 °C
IF = 50 A, dIF/dt = 200 A/μs,
VCC = 400 V, TJ = 125 °C
-
10
-
-
-
-
-
-
TYP.
0.6
1.1
1.7
0.8
1.3
2.1
197
50
225
72
Fullsquare
-
116
11
600
152
16
1215
MAX.
-
-
-
-
-
-
-
-
-
-
-
140
15
1050
190
20
1900
UNITS
mJ
ns
ns
A
nC
ns
A
nC
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 94501
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/

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