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GB05XP120KTPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Three Phase Inverter Module - Vishay Siliconix

भाग संख्या GB05XP120KTPBF
समारोह Three Phase Inverter Module
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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GB05XP120KTPBF pdf
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GB05XP120KTPbF
Vishay Semiconductors Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED® Diodes, 5 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage V(BR)CES
Temperature coefficient of V(BR)CES
V(BR)CES/TJ
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VGE(th)/TJ
VGE = 0 V, IC = 250 μA
VGE = 0 V, IC = 1 mA (25 °C to 125 °C)
VGE = 15 V, IC = 6 A
VGE = 15 V, IC = 12 A
VGE = 15 V, IC = 6 A, TJ = 125 °C
VGE = 15 V, IC = 12 A, TJ = 125 °C
IC = 250 μA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Forward transconductance
Collector to emitter leaking current
Diode forward voltage drop
Gate to emitter leakage current
gfe VCE = 25 V, IC = 6 A
ICES VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IF = 6 A, VGE = 0 V
VFM
IF = 12 A, VGE = 0 V
IF = 6 A, VGE = 0 V, TJ = 125 °C
IF = 12 A, VGE = 0 V, TJ = 125 °C
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
TYP.
-
1.14
2.90
4.04
3.45
5.07
-
- 10
3.2
-
-
2.33
3.01
2.55
3.45
-
MAX.
-
-
3.17
4.46
3.60
5.32
6
-
-
250
1000
2.77
3.63
2.98
4.07
± 250
UNITS
V
V/°C
V
mV/°C
S
μA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Qg IC = 6 A
Qge VCC = 600 V
Qgc VGE = 15 V
Eon IC = 6 A, VCC = 600 V, VGE = 15 V
Eoff
Rg = 10 , L = 2.0 mH, TJ = 25 °C
Energy losses include tail and
Etot diode reverse recovery
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 6 A, VCC = 600 V, VGE = 15 V
Eoff
Rg = 10 , L = 2.0 mH, TJ = 125 °C
Energy losses include tail and
Etot diode reverse recovery
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse BIAS safe operating area
Short circuit safe operating area
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery energy
Diode reverse recovery time
Diode peak reverse current
td(on)
tr
td(off)
tf
RBSOA
SCSOA
Cies
Coes
Cres
Erec
trr
Irr
IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, LS = 100 nH
Rg = 10 , TJ = 125 °C
TJ = 150 °C, IC = 24 A
Rg = 10 , VGE = 15 V to 0
VCC = 600 V, VGE = + 15 V to 0
TJ = 150 °C, VP = 1200 V, Rg = 10
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, LS = 100 nH
Rg = 10 , TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
27
3.7
14
0.606
0.340
0.946
0.779
0.403
1.182
47
17
99
362
MAX.
41
5.6
21
0.909
0.510
1.420
1.170
0.605
1.775
71
26
150
543
Fullsquare
10 -
-
- 369 554
- 244 366
- 12 18
- 334 -
- 54 -
- 17 -
UNITS
nC
mJ
mJ
ns
μs
pF
μJ
ns
A
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93912
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 03-Aug-10
Datasheet pdf - http://www.DataSheet4U.net/

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भाग संख्याविवरणविनिर्माण
GB05XP120KTPBFThree Phase Inverter ModuleVishay Siliconix
Vishay Siliconix


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