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IRF540S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - Vishay Siliconix

भाग संख्या IRF540S
समारोह Power MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF540S?> डेटा पत्रक पीडीएफ

IRF540S pdf
www.DataSheet.co.kr
IRF540S, SiHF540S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 17 Ab
VDS = 50 V, ID = 17 Ab
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 17 A, VDS = 80 V,
see fig. 6 and 13b
VDD = 50 V, ID = 17 A,
Rg = 9.1 , RD = 2.9 , see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
100 -
-V
- 0.13 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
- - 0.077
8.7 -
-S
- 1700 -
- 560 - pF
- 120 -
- - 72
- - 11 nC
- - 32
- 11 -
- 44 -
ns
- 53 -
- 43 -
- 4.5 -
nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 28
A
- - 110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 28 A, VGS = 0 Vb
- - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 180 360 ns
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
Qrr - 1.3 2.8 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91022
S11-1046-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

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