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GT100DA120U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - Vishay Siliconix

भाग संख्या GT100DA120U
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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GT100DA120U pdf
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GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VGE(th)/TJ
Collector to emitter leakage current
ICES
Forward voltage drop
Gate to emitter leakage current
VFM
IGES
VGE = 0 V, IC = 250 μA
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 100 A, TJ = 125 °C
VCE = VGE, IC = 7.5 mA
VCE = VGE, IC = 1 mA (25 °C to 125 °C)
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IF = 40 A, VGE = 0 V
IF = 40 A, VGE = 0 V, TJ = 125 °C
VGE = ± 20 V
MIN.
1200
-
-
4.9
-
-
-
-
-
-
TYP.
-
1.73
1.98
5.9
- 17.6
0.6
0.6
2.81
3.07
-
MAX.
-
2.1
2.2
7.9
UNITS
V
- mV/°C
100
10
3.3
3.4
± 200
μA
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Short circuit safe operating area
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
trr
Irr
Qrr
trr
Irr
Qrr
SCSOA
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 25 °C
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 5 
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 20)
TJ = 150 °C, IC = 450 A, Rg = 22 
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V, L = 500 μH
IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V
IF = 50 A, dIF/dt = 200 A/μs,
Vrr = 400 V, TJ = 125 °C
TJ = 150 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 900 V,
Vp = 1200 V
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
5.2
7.1
12.3
6.1
9.8
15.9
350
75
374
493
MAX.
-
-
-
-
-
-
-
-
-
-
Fullsquare
- 164 194
- 12 15
- 994 1455
- 230 273
- 16.5 20
- 1864 2730
10
UNITS
mJ
ns
ns
A
nC
ns
A
nC
μs
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 93196
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
Datasheet pdf - http://www.DataSheet4U.net/

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GT100DA120UInsulated Gate Bipolar TransistorVishay Siliconix
Vishay Siliconix


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