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IXA12IF1200HB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - XPT IGBT - IXYS

भाग संख्या IXA12IF1200HB
समारोह XPT IGBT
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=IXA12IF1200HB?> डेटा पत्रक पीडीएफ

IXA12IF1200HB pdf
Diode
Symbol
I F25
IF 90
VF
Definition
Forward current
Forward voltage
Qrr
I RM
trr
Erec(off)
RthJC
Reverse recovery charge
Maximum reverse recovery current
Reverse recovery time
Reverse recovery losses at turn-off
Thermal resistance juntion to case
Conditions
TC = 25°C
TC = 90°C
IF = 10 A
VR = 600V;
diF /dt = -
IF = 10 A
A/µs;
Equivalent Circuits for Simmulation
I
V0
R0
Symbol
V0
R0
V0
R0
Definition
IGBT
Diode
R1
C1
R2
C2
R3
C3
R4
C4
R1
R2
R3
R4
τ1
τ2
τ3
τ4
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IXA12IF1200HB
preliminary
TVJ = 25°C
TVJ = 125 °C
TVJ = 125 °C
Ratings
min. typ. max.
22
14
1.95 2.2
1.85
tbd
tbd
tbd
tbd
1.8
UnVit
A
A
V
V
µC
A
ns
mJ
K/W
TVJ = 150 °C
TVJ = 150 °C
Ratings
min. typ. max.
1.1
153
1.1
90
Unit
V
mΩ
V
mΩ
IGBT
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
Diode
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409

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डाउनलोड[ IXA12IF1200HB Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXA12IF1200HBXPT IGBTIXYS
IXYS


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