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PJ4N3KDW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected - Pan Jit International

भाग संख्या PJ4N3KDW
समारोह 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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PJ4N3KDW pdf
PJ4N3KDW
ELECTRICAL CHARACTERISTICS (TA=25OC )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
S ymb o l
BV DSS
V GS(th)
R D S (o n)
R D S (o n)
ID S S
IGS S
g fS
V
SD
To ta l Ga te C ha rg e
Turn-On D e la y Ti me
Ri se Ti me
Turn-Off D e la y Ti me
Fall time
Inp ut C ap aci ta nce
Output Capacitance
Re ve rs e Tra ns fe r
C a p a c i ta nc e
Qg
td (ON)
tr
t d (OFF)
t
f
C iss
C
oss
C rss
Te s t C o nd i ti o n
V GS=0V, ID=1 0uA
VDS=3.0V, ID=100uA
VGS=2.5V, I D=1mA
VGS=4.0V, I D=10mA
VDS=30V, VGS=0V
V GS=+20 V, V DS=0V
V DS=3 V, ID=10 mA
I =115mA , V =0V
S GS
VDS=15V, ID=10mA
VGS=4.5V
VDD=5V , RL=500Ω
ID=10mA , VGEN=5V
RG=10Ω
VDS=5V, VGS=0V
f=1.0MH
Z
Mi n.
30
0.8
-
-
-
-
10
-
-
-
-
-
-
-
-
-
Typ .
M a x.
Uni ts
- -V
- 1.5 V
- 7.0
Ω
- 5.0
- 1 uA
- 5 uA
- - mS
0.78
1.3
V
- 0.8 nC
30 35
8.5 12
ns
84 100
32 40
25 35
8 12 p F
2.5 5
www.DataSheet4U.com
REV.0.3-SEP.25.2009
PAGE . 2

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