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PJ2306 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V N-Channel Enhancement Mode MOSFET - ESD Protected - Pan Jit International

भाग संख्या PJ2306
समारोह 30V N-Channel Enhancement Mode MOSFET - ESD Protected
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
1 Page
		
<?=PJ2306?> डेटा पत्रक पीडीएफ

PJ2306 pdf
PJ2306
ELECTRICALCHARACTERISTICS
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urre nt
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
To t a l G a t e C ha r g e
S ymbol
Te s t C o nd i ti o n
B V DSS
V GS(th)
R D S (o n)
R D S (o n)
ID S S
IGS S
g fS
V SD
V GS=0 V, ID=2 5 0 uA
V DS=V GS, ID=2 5 0 uA
VGS=4.5V, I D=2.8A
VGS=10V, I D=3.2A
VDS=24V, VGS=0V
VGS=+16V, VDS=0V
V DS=4 .5 V, ID=2 .8 A
IS=2.8A , V GS=0V
V DS = 1 5 V, ID= 3 . 2 A , VGS=5V
Qg
Gate-Source C harge
Gate-Grain Charge
Turn-On D e la y Ti me
Ri s e Ti me
Turn-Off D e la y Ti me
F a ll Ti m e
Inp ut C a p a c i ta nc e
Output Capacitance
Re ve r s e Tr a ns f e r
C a p a c i ta nce
Qgs
Qgd
t d (o n)
tr
t d (o ff)
tf
C iss
C oss
C rss
V DS=1 5 V, ID=3 .2 A
VGS=10V
VDD=15V , RL=15
ID=1A , VGEN=10V
RG=6
V DS=15 V, V GS=0V
f=1.0MHZ
NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
Mi n.
30
1
3
Typ .
Max. Uni ts
72
55
0.88
2.5
85
65
1
+10
1.2
V
V
m
uA
uA
S
V
2.8
5.0
0.5
1.1
8.6
12.8
18.6
1.9
270
45
30
3.5
6.5
11.2
16.8
26
2.6
nC
ns
pF
Switching
Test Circuit
www.DataSheet4U.com
VIN
RG
VDD
RL
VOUT
Gate Charge
Test Circuit
VGS
1mA
RG
VDD
RL
June 03, 2010-REV.00
PAGE . 2

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