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FDP047N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP047N10
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP047N10?> डेटा पत्रक पीडीएफ

FDP047N10 pdf
Package Marking and Ordering Information
Device Marking
FDP047N10
Device
FDP047N10
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 75A
VGS = 10V, RGEN = 25Ω
VDS = 80V, ID = 75A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.41mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 75A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ. Max. Units
- -V
0.1 - V/oC
-
-
1
500
μA
- ±100 nA
3.5 4.5 V
3.9 4.7 mΩ
170 - S
11500
1120
455
15265
1500
680
pF
pF
pF
174 358 ns
386 782 ns
344 698 ns
244 499 ns
160 210 nC
56 - nC
36 - nC
- 164 A
- 656 A
- 1.25 V
88 - ns
245 - nC
FDP047N10 Rev. B2
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2 www.fairchildsemi.com

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डाउनलोड[ FDP047N10 Datasheet.PDF ]


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