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FDP047N08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP047N08
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=FDP047N08?> डेटा पत्रक पीडीएफ

FDP047N08 pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP047N08
Device
FDP047N08
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
Test Conditions
Min. Typ. Max. Units
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 75V, VGS = 0V
VDS = 75V, TC = 150oC
VGS = ±20V, VDS = 0V
75 -
- 0.02
-V
- V/oC
--1
µA
- - 500
- - ±100 nA
VGS = VDS, ID = 250µA
VGS = 10V, ID = 80A
VDS = 10V, ID = 80A
(Note 4)
2.5
-
-
3.5
3.7
150
4.5 V
4.7 m
-S
VDS = 25V, VGS = 0V
f = 1MHz
- 7080 9415 pF
- 870 1155 pF
- 410 615 pF
VDD = 37.5V, ID = 80A
RGEN = 25Ω, VGS = 10V
(Note 4, 5)
VDS = 60V, ID = 80A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
-
100 210 ns
147 304 ns
220 450 ns
114 238 ns
117 152 nC
37 - nC
32 - nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 80A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 80A
dIF/dt = 100A/µs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.21mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 75A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
- 164 A
- 656 A
- 1.25 V
45 - ns
66 - nC
FDP047N08 Rev. A
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डाउनलोड[ FDP047N08 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDP047N08N-Channel PowerTrench MOSFETFairchild Semiconductor
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