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GT2181 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Audio Transistor - Musitech

भाग संख्या GT2181
समारोह Power Audio Transistor
मैन्युफैक्चरर्स Musitech 
लोगो Musitech लोगो 
पूर्व दर्शन
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<?=GT2181?> डेटा पत्रक पीडीएफ

GT2181 pdf
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Break-
down Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 20A, VGE = 15V
VCE = 20V, VGE = 0V,
f = 1MHz
VCC = 150 V, IC = 10A,
RG = 10, VGE = 10V,
Inductive Load, TC = 25°C
VCC = 150 V, IC = 10A,
RG = 10, VGE = 10V,
Inductive Load, TC = 125°C
VCE = 150 V, IC = 10A,
VGE = 10V
Measured 5mm from PKG
200 --
--
-- 0.23 --
V
V/°C
-- -- 250 uA
-- -- ± 100 nA
2.5 --- 4.0
V
-- 1.2 2.3 V
-- 2.5 3.8
V
-- 1105 --
-- 310 --
-- 96
--
pF
pF
pF
-- 20 -- ns
-- 68 -- ns
-- 89 -- ns
-- 24 -- ns
-- 450 --
uJ
-- 300 --
uJ
-- 190 301   uJ
-- 32 -- ns
-- 88 -- ns
-- 167 -- ns
-- 91 --
ns
-- 560 --
uJ
-- 110 --
uJ
-- 361 580 uJ
-- 33 -- nC
-- 8 -- nC
-- 18 -- nC
-- 11 -- nH
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 20A
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IF = 20A,
di/dt = 200A/us
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.2
1.0
120
210
7.4
9.5
750
1120
Max.
1.5
--
--
--
--
--
--
--
Units
V
ns
A
nC
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
© 2006 Musitech Semiconductor Corporation
2
GT2181 Rev:A

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डाउनलोड[ GT2181 Datasheet.PDF ]


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GT2181Power Audio TransistorMusitech
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