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STE26NA90 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - ISOTOP FAST POWER MOSFET - STMicroelectronics

भाग संख्या STE26NA90
समारोह ISOTOP FAST POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STE26NA90?> डेटा पत्रक पीडीएफ

STE26NA90 pdf
STE26NA90
www.DataSheet4U.com
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
13
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
250
1000
± 200
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS
Static Drain-source On VGS = 10 V
Resistance
ID = 1 mA
ID = 13 A
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
0.25
Max.
3.75
0.3
Unit
V
26 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x
ID = 13 A
Min.
15
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
13600 17700
1130 1470
270 350
pF
pF
pF
2/8

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डाउनलोड[ STE26NA90 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STE26NA90ISOTOP FAST POWER MOSFETSTMicroelectronics
STMicroelectronics


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