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STE26N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR - STMicroelectronics

भाग संख्या STE26N50
समारोह N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=STE26N50?> डेटा पत्रक पीडीएफ

STE26N50 pdf
STE26N50
www.DataSheet4U.com
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthc-h Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.42
0.05
oC/ W
oC/ W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0 V
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
500
Typ.
Max.
Unit
V
200
1
± 200
µA
mA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 13 A
R esist anc e
Min.
2
Typ.
Max.
4
0.2
Unit
V
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ID = 13 A
Min.
12
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0 V
6
1200
500
nF
pF
pF
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Test Conditions
VDD = 250 V ID = 13 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 1)
VDD = 400 V ID = 26 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V
VGS = 10 V
ID = 26 A
Min.
Typ.
60
80
Max.
Unit
ns
ns
450 A/µs
275 nC
2/8

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डाउनलोड[ STE26N50 Datasheet.PDF ]


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STE26N50N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSTMicroelectronics
STMicroelectronics


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