KH29LV320CT डेटा पत्रक PDF( Datasheet डाउनलोड )

डेटा पत्रक - 32M-Bit Single Voltage 3V Only Flash Memory - Macronix

भाग संख्या KH29LV320CT
समारोह 32M-Bit Single Voltage 3V Only Flash Memory
मैन्युफैक्चरर्स Macronix 
लोगो Macronix लोगो 
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<?=KH29LV320CT?> डेटा पत्रक पीडीएफ

KH29LV320CT pdf
cycling. The KH29LV320C T/B uses a 2.7V to 3.6V VCC
supply to perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is achieved with
MXIC's proprietary non-epi process. Latch-up protection
is proved for stresses up to 100 milliamperes on address
and data pin from -1V to VCC + 1V.
The KH29LV320C T/B is byte/word programmable using
the Automatic Programming algorithm. The Automatic
Programming algorithm makes the external system do
not need to have time out sequence nor to verify the
data programmed. The typical chip programming time at
room temperature of the KH29LV320C T/B is less than
36 seconds.
MXIC's Automatic Programming algorithm require the user
to only write program set-up commands (including 2 un-
lock write cycle and A0H) and a program command (pro-
gram data and address). The device automatically times
the programming pulse width, provides the program veri-
fication, and counts the number of sequences. A status
bit similar to Data# Polling and a status bit toggling be-
tween consecutive read cycles, provide feedback to the
user as to the status of the programming operation.
The entire chip is bulk erased using 50 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 35 seconds. The Automatic Erase algorithm
automatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
controlled internally within the device.
automatically programs the specified sector(s) prior to
electrical erase. The timing and verification of electri-
cal erase are controlled internally within the device.
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stand-
ard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number of
sequences. A status bit toggling between consecutive
read cycles provides feedback to the user as to the sta-
tus of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, relia-
bility, and cost effectiveness.The KH29LV320C T/B elec-
trically erases all bits simultaneously using Fowler-Nord-
heim tunneling. The bytes/words are programmed by
using the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
The KH29LV320C T/B is sector(s) erasable using
MXIC's Auto Sector Erase algorithm. Sector erase
modes allow sectors of the array to be erased in one
erase cycle. The Automatic Sector Erase algorithm
REV. 1.1, DEC. 09, 2005

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डाउनलोड[ KH29LV320CT Datasheet.PDF ]

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भाग संख्याविवरणविनिर्माण
KH29LV320CB32M-Bit Single Voltage 3V Only Flash MemoryMacronix
KH29LV320CT32M-Bit Single Voltage 3V Only Flash MemoryMacronix

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