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FDL100N50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDL100N50F
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDL100N50F?> डेटा पत्रक पीडीएफ

FDL100N50F pdf
Package Marking and Ordering Information
Device Marking
FDL100N50F
Device
FDL100N50F
Package
TO-264
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC = 25oC
ID = 250µA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VDS = 20V, ID = 50A
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDD = 400V, ID = 50A
VGS = 10V
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 50A
RG = 4.7
Drain-Source Diode Characteristics
www.DataSIhSeet4U.com
ISM
VSD
trr
Qrr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS = 0V, ISD = 100A
VGS = 0V, ISD = 100A
dIF/dt = 100A/µs
Min.
500
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.5
-
-
-
-
0.043
95
12000
1700
64
238
74
95
63
186
202
105
-
-
-
250
1.5
Max. Units
-
-
10
100
±100
V
V/oC
µA
nA
5.0
0.055
-
V
S
- pF
- pF
- pF
- nC
- nC
- nC
- ns
- ns
- ns
- ns
100 A
400 A
1.5 V
- ns
- nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 100A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 100A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDL100N50F Rev. A
2 www.fairchildsemi.com

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डाउनलोड[ FDL100N50F Datasheet.PDF ]


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