DataSheet.in

FDI040N06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDI040N06
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDI040N06?> डेटा पत्रक पीडीएफ

FDI040N06 pdf
Package Marking and Ordering Information
Device Marking
FDI038N06
Device
FDI038N06
Package
TO-262
Reel Size
Tube
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to 25oC
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
60
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 75A
VDS = 10V, ID = 75A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 48V, ID = 75A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 30V, ID = 75A
VGS = 10V, RGEN = 4.7
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
www.DataSheet4U.com
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 75A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.04
-
-
-
3.5
3.2
169
6190
900
385
102
32
32
30
40
55
24
-
-
-
41
47
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
4.0 m
-S
8235
1195
580
133
-
-
pF
pF
pF
nC
nC
nC
70 ns
90 ns
120 ns
58 ns
168 A
672 A
1.3 V
- ns
- nC
FDI040N06 Rev. A
2 www.fairchildsemi.com

विन्यास 8 पेज
डाउनलोड[ FDI040N06 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDI040N06N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English