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FDD8426H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P and N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDD8426H
समारोह Dual P and N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD8426H?> डेटा पत्रक पीडीएफ

FDD8426H pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VDS = 32 V, VGS = 0 V
VDS = -32 V, VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
Type Min Typ Max Units
Q1 40
Q2 -40
V
Q1
Q2
35
-32
mV/°C
Q1
Q2
1
-1
µA
Q1 ±100 nA
Q2 ±100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 µA
VGS = VDS, ID = -250 µA
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
VGS = -10 V, ID = -10 A
VGS = -4.5 V , ID = -8.3 A
VGS = -10 V, ID = -10 A, TJ = 125 °C
VDD = 5 V, ID = 12 A
VDD = -5 V, ID = -10 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1
VDS = 20 V, VGS = 0 V, f = 1MHZ
Q2
VDS = -20 V, VGS = 0 V, f = 1MHZ
Rg Gate Resistance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.5
-1.5
2
2
3.0
-3.0
V
-6
6
mV/°C
9.3 12
11 15
14 22
m
13 17
19 27
19 30
53
31
S
2055
1900
255
330
165
200
1.1
3.3
2735
2650
335
440
245
300
pF
pF
pF
www.DataShSewet4itUc.hcoinmg Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 20 V, ID = 12 A,
VGS = 10 V, RGEN = 6
Q2
VDD = -20 V, ID = -10 A,
VGS = -10 V, RGEN = 6
VGS = 0 V to 10 V Q1
VGS = 0 V to -10 V VDD = 20 V,
VGS = 0 V to 5 V ID = 12 A
VGS = 0 V to -5 V
Q2
VDD = -20 V,
ID = -10 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9.7
9.7
20
20
ns
4.9
6.9
10
14
ns
27
32
43
51
ns
3.7
7.5
10
15
ns
38
37
53
52
nC
20
20
28
28
nC
6.3
6.6
nC
7.1
8
nC
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
2
www.fairchildsemi.com

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