DataSheet.in

FDD6778A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDD6778A
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6778A?> डेटा पत्रक पीडीएफ

FDD6778A pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
25
V
ID = 250 µA, referenced to 25 °C
17 mV/°C
VDS = 20 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 10.0 A
VGS = 4.5 V, ID = 9.7 A
VGS = 10 V, ID = 10.0 A, TJ = 150 °C
VDS = 5 V, ID = 10.0 A
1.0
1.9 3.0
V
-6 mV/°C
11.4
22.0
17.2
33
14
30.0
21.2
m
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
652 870
142 190
129 195
0.8
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 10.0 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 13 V,
ID = 10.0 A
6 12
3 10
14 26
2 10
12 17
7 10
2.0
2.8
ns
ns
ns
ns
nC
nC
nC
nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 10.0 A
(Note 2)
(Note 2)
IF = 10.0 A, di/dt = 100 A/µs
0.9 1.3
0.8 1.2
14 26
3 10
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 12 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 5 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 12 A.
©2009 Fairchild Semiconductor Corporation
FDD6778A Rev.C
2
www.fairchildsemi.com

विन्यास 6 पेज
डाउनलोड[ FDD6778A Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDD6778AN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English