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FDD6760A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDD6760A
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6760A?> डेटा पत्रक पीडीएफ

FDD6760A pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
25
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
16 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
1 µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0 1.6 3.0
V
VGS(th) Gate to Source Threshold Voltage
TJ Temperature Coefficient
ID = 250 µA, referenced to 25 °C
-7 mV/°C
VGS = 10 V, ID = 27 A
2.3 3.2
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 21 A
4.4 6.0 m
VGS = 10 V, ID = 27 A, TJ = 150 °C
3.5 4.9
gFS Forward Transconductance
VDS = 5 V, ID = 27 A
186 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1MHz
f = 1MHz
2380
525
470
1.3
3170
700
710
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 27 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 5 V VDD = 13 V,
ID = 17 A
10 20 ns
9 18 ns
28 ns
6 ns
44 62 nC
25 35 nC
6 nC
9.9 nC
www.DataShDereat4iUn.-cSomource Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 3.1 A
VGS = 0 V, IS = 27 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 27A, di/dt = 100 A/µs
0.7 1.2
0.8 1.3
V
21 34 ns
8 16 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 96 °C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 29 A.
©2009 Fairchild Semiconductor Corporation
FDD6760A Rev.C
2
www.fairchildsemi.com

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