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KI4511DY डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - KEXIN

भाग संख्या KI4511DY
समारोह MOSFET
मैन्युफैक्चरर्स KEXIN 
लोगो KEXIN लोगो 
पूर्व दर्शन
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KI4511DY pdf
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SMD Type
TransistIoCrs
KI4511DY
Electrical Characteristics TJ = 25
Parameter
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On State Drain Currenta
Drain Source On State Resistance*
Forward Transconductance*
Diode Forward Voltage*
Total Gate Charge
Symbol
VGS( th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
Qg
Testconditons
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 0 V VGS = 16 V
VDS = 0 V VGS = 12 V
VDS = 20V, VGS = 0 V
VDS = -16V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55
VDS = -16V, VGS = 0 V, TJ = 55
VDS =5 V, VGS = 10 V
VDS =-5 V, VGS = -4.5 V
VGS = 10 V, ID = 9.6A
VGS = -4.5 V, ID = -6.2A
VGS = 4.5 V, ID = 8.6A
VGS = -2.5 V, ID = -5A
VDS = 15 V, ID = 9.6A
VDS = -15 V, ID = -6.2A
IS = 1.7A, VGS = 0 V
IS = -1.7A, VGS = 0 V
N-Channel
VDS = 10 V, VGS = 4.5V, ID = 9.6A
Gate Source Charge
Gate Drain Charge
Qgs
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -6.2A
Qgd
Turn On Time
Rise Time
td(on)
tr
N Channel
VDD = 10 V, RL = 10
ID= 1A, VGEN = 10V, Rg = 6
Turn Off Delay Time
Fall Time
td( off)
tf
P-Channel
VDD = -10 V, RL = 10
ID= -1 A, VGEN = -4.5 V, Rg = 6
IF = 1.7 A, di/dt = 100 A/ s
Source-Drain Reverse Recovery Time trr
IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
0.6 1.8
-0.6 1.4
100
100
1
-1
5
-5
40
-40
0.0115 0.0145
0.022 0.033
0.0135 0.017
0.035 0.050
33
17
0.8 1.2
?0.8 -1.2
11.5 18
17 20
3.7
4.1
3.3
4.3
12 20
25 40
12 20
V
nA
A
A
S
V
nC
30 45
55 85 ns
70 105
15 25
50 75
50 100
40 80
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
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