DataSheet.in

FDMA6023PZT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA6023PZT
समारोह Dual P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMA6023PZT?> डेटा पत्रक पीडीएफ

FDMA6023PZT pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
www.datashIDeSeSt4u.com
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 µA, VGS = 0 V
-20
V
ID = -250 µA, referenced to 25 °C -12 mV/°C
VDS = -16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
-1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250 µA
-0.4 -0.5 -1.5
V
ID = -250 µA, referenced to 25 °C -2.7 mV/°C
VGS = -4.5 V, ID = -3.6 A
VGS = -2.5 V, ID = -3.0 A
VGS = -1.8 V, ID = -2.0 A
VGS = -1.5 V, ID = -1.0 A
VGS = -4.5 V, ID = -3.6 A,
TJ = 125 °C
VDD = -5 V, ID = -3.6 A
40 60
49 80
60 110 m
70 170
58 72
15 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
665 885
115 155
100 150
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -3.6 A,
VGS = -4.5 V, RGEN = 6
VGS = 0 V to -4.5 V VDD = -10 V,
ID = -3.6 A
13 23 ns
11 20 ns
75 120 ns
47 75 ns
12 17 nC
1.4 nC
5.2 nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.1 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -3.6 A, di/dt = 100 A/µs
-1.1
-0.7 -1.2
33 53
15 27
A
V
ns
nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a) 86oC/W when
mounted on a
1in2 pad of 2 oz
copper.
b)173oC/W
when mounted
on a minimum
pad of 2 oz
copper.
c) 69oC/W when
mounted on a
1in2 pad of 2 oz
copper.
d)151oC/W
when mounted
on a minimum
pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B
2
www.fairchildsemi.com

विन्यास 6 पेज
डाउनलोड[ FDMA6023PZT Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMA6023PZTDual P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English