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FDMA410NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel 1.5 V Specified PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA410NZ
समारोह Single N-Channel 1.5 V Specified PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA410NZ?> डेटा पत्रक पीडीएफ

FDMA410NZ pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
www.datashIDeSeSt4u.com
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 16 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
20
V
17 mV/°C
1 µA
±10 µA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.4 0.7 1.0
V
ID = 250 µA, referenced to 25 °C –3 mV/°C
VGS = 4.5 V, ID = 9.5 A
VGS = 2.5 V, ID = 8.0 A
VGS = 1.8 V, ID = 4.0 A
VGS = 1.5 V, ID = 2.0 A
VGS = 4.5 V, ID = 9.5 A,
TJ = 125 °C
VDD = 5 V, ID = 9.5 A
17 23
20 29
24 36 m
29 50
23 32
35 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10 V, VGS = 0 V,
f = 1 MHz
f = 1 MHz
815 1080
130 175
85 130
2.1
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 9.5 A,
VGS = 4.5 V, RGEN = 6
VGS = 4.5 V , VDD = 10 V,
ID = 9.5 A
7.5 15
ns
3.9 10
ns
27 44 ns
3.7 10
ns
10 14 nC
1.2 nC
2.0 nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2.0 A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9.5 A, di/dt = 100 A/µs
2.0 A
0.7 1.2
V
12 22 ns
2.6 10 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by
the user's board design.
a.52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B
2
www.fairchildsemi.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMA410NZSingle N-Channel 1.5 V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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