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FDMA1029PZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA1029PZ
समारोह Dual P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA1029PZ?> डेटा पत्रक पीडीएफ

FDMA1029PZ pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
www.datasheet4u.cBoVmDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS= –4.5 V, ID = –3.1 A, TJ=125°C
VDS = –10 V, ID = –3.1 A
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10 V, ID = –3.1 A,
VGS = –4.5 V
–20
–0.6
–12
–1.0
4
60
88
87
–11
540
120
100
13
11
37
36
7.0
1.1
2.4
V
mV/°C
–1 µA
±10 µA
–1.5 V
mV/°C
95 m
141
140
S
pF
pF
pF
24 ns
20 ns
59 ns
58 ns
10 nC
nC
nC
FDMA1029PZ Rev B (W)

विन्यास 7 पेज
डाउनलोड[ FDMA1029PZ Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMA1029PZDual P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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