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3SK228 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Triple Diffused - Hitachi Semiconductor

भाग संख्या 3SK228
समारोह Silicon NPN Triple Diffused
मैन्युफैक्चरर्स Hitachi Semiconductor 
लोगो Hitachi Semiconductor लोगो 
पूर्व दर्शन
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<?=3SK228?> डेटा पत्रक पीडीएफ

3SK228 pdf
www.Data3SSheKet42U2.c8om
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
–6
–6
50
150
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source cutoff current IDSX
— — 50
Gate 1 to source breakdown
voltage
V(BR)G1SS
Gate 2 to source breakdown
voltage
V(BR)G2SS
Gate 1 cutoff current
I G1SS
Gate 2 cutoff current
I G2SS
Drain current
I DSS
Gate 1 to source cutoff voltage VG1S(off)
–6
–6
10
——
——
— –5
— –5
17 32
–1.1 –1.5
Gate 2 to source cutoff voltage VG2S(off)
–1.1 –1.5
Forward transfer admittance |yfs|
20 34 —
Input capacitance
Ciss — 0.58 1.0
Output capacitance
Reverse transfer capacitance
Power gain
Coss
Crss
PG
17
0.36
0.028
19.6
0.6
0.05
Noise figure
Note: Marking is “XR–”.
NF
— 1.3 2.0
Unit
µA
V
V
µA
µA
mA
V
V
mS
pF
pF
pF
dB
dB
Test conditions
VDS = 12 V, VG1S = –3 V,
VG2S = 0
IG1 = –10 µA, VG2S = VDS = 0
IG2 = –10 µA, VG1S = VDS = 0
VG1S = –5 V, VG2S = VDS = 0
VG2S = –5 V, VG1S = VDS = 0
VDS = 5 V, VG1S = VG2S = 0
VDS = 5 V, VG2S = 0,
ID = 100 µA
VDS = 5 V, VG1S = 0,
ID = 100 µA
VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 kHz
VDS = 5 V, VG1S = VG2S = –3 V,
f = 1 MHz
VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 900 MHz
2

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