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FDP150N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP150N10
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP150N10?> डेटा पत्रक पीडीएफ

FDP150N10 pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
wwwD.DevaitcaeShMeaertk4iUn.gcom
Device
Package
Reel Size
Tape Width
FDP150N10
FDP150N10
TO-220
-
-
Quantity
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250µA, VGS = 0V, TC= 25oC
ID = 250µA, Referenced to 25oC
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TC = 150oC
VGS = ±20V, VDS = 0V
100
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
VGS = 10V, ID = 49A
VDS = 20V, ID = 49A
(Note 4)
2.5
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V
f = 1MHz
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(tot)
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 49A
VGS = 10V, RGEN = 25
VDS = 80V, ID = 49A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
-
-
-
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 49A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 49A
dIF/dt = 100A/µs
(Note 4)
-
-
-
-
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, IAS = 49A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 49A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width 300µs, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Typ.
-
0.1
-
-
-
-
12
156
3580
340
140
47
164
86
83
53
19
15
-
-
-
41
70
Max. Units
-
-
1
500
±100
V
V/oC
µA
nA
4.5 V
15 m
-S
4760
450
210
pF
pF
pF
104 ns
338 ns
182 ns
176 ns
69 nC
- nC
- nC
57 A
228 A
1.3 V
- ns
- nC
FDP150N10 Rev. A
2 www.fairchildsemi.com

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डाउनलोड[ FDP150N10 Datasheet.PDF ]


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