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FDP2710 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 250V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDP2710
समारोह 250V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP2710?> डेटा पत्रक पीडीएफ

FDP2710 pdf
Package Marking and Ordering Information
www.DDaetvaSicheeeMt4aUr.ckoimng
FDP2710
Device
FDP2710
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA, TJ = 25°C
ID = 250μA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V,TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 10V, ID = 25A
VDS = 10V, ID = 25A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 50A
VGS = 10V, RGEN = 25Ω
VDS = 125V, ID = 50A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 50A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 50A
dIF/dt =100A/μs
(Note 4)
Min
250
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.25
--
--
--
--
4.0
36.3
63
5470
426
97
80
252
112
154
78
34
18
--
--
--
163
1.3
Max Units
--
--
10
500
100
-100
V
V/°C
μA
μA
nA
nA
5.0 V
42.5 mΩ
-- S
7280
570
146
pF
pF
pF
170 ns
515 ns
235 ns
320 ns
101 nC
-- nC
-- nC
50 A
150 A
1.2 V
-- ns
-- μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 50A, di/dt 100A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP2710 Rev. A
2 www.fairchildsemi.com

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