DataSheet.in

FDP20N50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDP20N50F
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP20N50F?> डेटा पत्रक पीडीएफ

FDP20N50F pdf
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP20N50F
Device
FDP20N50F
Package
TO-220
Reel Size
-
Tape Width
-
FDPF20N50FT
FDPF20N50FT
TO-220F
-
-
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 10A
VDS = 20V, ID = 10A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 20A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/s
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 20A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
Typ.
-
0.7
-
-
-
-
0.22
25
2550
350
27
50
14
20
45
120
100
60
-
-
-
154
0.5
Quantity
50
50
Max. Unit
-
-
10
100
±100
V
V/oC
A
nA
5.0 V
0.26
-S
3390
465
40
65
-
-
pF
pF
pF
nC
nC
nC
100 ns
250 ns
210 ns
130 ns
20 A
80 A
1.5 V
- ns
- C
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
2
www.fairchildsemi.com

विन्यास 10 पेज
डाउनलोड[ FDP20N50F Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDP20N50N-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor
FDP20N50FN-Channel MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English