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FRA804G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers - Taiwan Semiconductor Company

भाग संख्या FRA804G
समारोह (FRA801G - FRA807G) Glass Passivated Fast Recovery Rectifiers
मैन्युफैक्चरर्स Taiwan Semiconductor Company 
लोगो Taiwan Semiconductor Company लोगो 
पूर्व दर्शन
1 Page
		
<?=FRA804G?> डेटा पत्रक पीडीएफ

FRA804G pdf
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RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
(+)
50Vdc
(approx)
(-)
DUT
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
+0.5A
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
8
6
4
2
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
125
100
75
TJ=1250C
8.3ms Single Half Sine Wave
JEDEC Method
150
50
25
0
12
5 10 20
NUMBER OF CYCLES AT 60Hz
50 100
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
100
80
60
40
Tj=250C
20 f=1.0MHz
Vsig=50mVp-p
0
0.1
0.5 1
5 10
50
REVERSE VOLTAGE. (V)
100
500 1000
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
400
200
100
40
20
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
10
4
2
1
0.4
0.2
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
100
40
Tj=1250C
10
4 Tj=750C
2
1
0.4
0.2 Tj=250C
0.1
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
- 453 -

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डाउनलोड[ FRA804G Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FRA804G(FRA801G - FRA807G) Glass Passivated Fast Recovery RectifiersTaiwan Semiconductor Company
Taiwan Semiconductor Company


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