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GW20NB60HD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STGW20NB60HD - STMicroelectronics

भाग संख्या GW20NB60HD
समारोह STGW20NB60HD
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=GW20NB60HD?> डेटा पत्रक पीडीएफ

GW20NB60HD pdf
STGW20NB60HD
www.DataSheet4U.com
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-heatsink
Max
Max
Typ
0 .8 3
30
0. 1
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
V BR(CES)
ICES
IGES
Parameter
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ.
Max.
U nit
V
250
2000
± 100
µA
µA
nA
ON ()
Symbol
VGE(th)
VCE(SAT )
Parameter
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min.
3
Typ.
Max.
5
U nit
V
VGE = 15 V IC = 20 A
VGE = 15 V IC = 20 A Tj = 125 oC
2.3 2.8
1.9
V
V
DYNAMIC
Symbol
gf s
Cies
Co es
Cres
QG
QGE
QGC
ICL
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V IC = 20 A
Min.
7.0
VCE = 25 V f = 1 MHz VGE = 0
1200
140
28
VCE = 480 V IC = 20 A VGE = 15 V
Vclamp = 480 V
Tj = 150 oC
RG=10 80
Typ.
10
1700
200
40
110
13
51
Max.
2200
260
52
145
U nit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
td(on)
tr
( di / dt ) o n
Eo n(r)
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 20 A
RG = 10
VCC = 480 V
RG = 10
Tj = 125 oC
IC = 20 A
VGE = 15 V
Min.
Typ.
20
70
350
550
Max.
U nit
ns
ns
A/µs
µJ
2/8

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डाउनलोड[ GW20NB60HD Datasheet.PDF ]


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