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GB15B60KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRGB15B60KD - International Rectifier

भाग संख्या GB15B60KD
समारोह IRGB15B60KD
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=GB15B60KD?> डेटा पत्रक पीडीएफ

GB15B60KD pdf
IRG/B/S/SL15B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
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V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage 1.5
–––
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.3 ––– V/°C
1.80 2.20
2.05 2.50 V
2.10 2.60
4.5 5.5 V
-10 ––– mV/°C
10.6 ––– S
5.0 150 µA
500 1000
1.20 1.45
1.20 1.45 V
––– ±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 15A, VGE = 15V
5, 6,7
IC = 15A, VGE = 15V TJ = 125°C 9, 10,11
IC = 15A, VGE = 15V TJ = 150°C
VCE = VGE, IC = 250µA
9, 10,11
VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
VCE = 50V, IC = 20A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 15A
8
IC = 15A TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg Total Gate Charge (turn-on)
Qge Gate - Emitter Charge (turn-on)
––– 56 84
––– 7.0 10
IC = 15A
nC VCC = 400V
CT1
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 26 39
––– 220 330
––– 340 455
––– 560 785
––– 34 44
––– 16 22
––– 184 200
VGE = 15V
µJ IC = 15A, VCC = 400V
VGE = 15V,RG = 22Ω, L = 200µH
Ls = 150nH
TJ = 25°C ƒ
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
ns Ls = 150nH, TJ = 25°C
CT4
CT4
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
––– 20 26
––– 355 470
IC = 15A, VCC = 400V
CT4
––– 490 600 µJ VGE = 15V,RG = 22Ω, L = 200µH
13,15
––– 835 1070
Ls = 150nH
TJ = 150°C ƒ WF1WF2
td(on)
tr
Turn-On Delay Time
Rise Time
––– 34 44
––– 18 25
IC = 15A, VCC = 400V
VGE = 15V, RG = 22Ω, L = 200µH
14, 16
CT4
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 203 226 ns Ls = 150nH, TJ = 150°C
––– 28 36
WF1
WF2
Cies
Coes
Input Capacitance
Output Capacitance
––– 850 –––
––– 75 –––
VGE = 0V
pF VCC = 30V
Cres
RBSOA
SCSOA
Erec
trr
Irr
Reverse Transfer Capacitance
––– 35 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 62A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 22CT2
Short Circuit Safe Operting Area
10
––– –––
µs
TJ = 150°C, Vp =600V,RG = 22
VCC = 360V, VGE = +15V to 0V
Reverse Recovery energy of the diode ––– 540 720 µJ TJ = 150°C
Diode Reverse Recovery time
––– 92 111 ns VCC = 400V, IF = 15A, L = 200µH
Diode Peak Reverse Recovery Current ––– 29 33 A VGE = 15V,RG = 22Ω, Ls = 150nH
CT3
WF4
17,18,19
20,21
CT4,WF3
Note  to „ are on page 15
2
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