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FR9024N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRFR9024N - International Rectifier

भाग संख्या FR9024N
समारोह IRFR9024N
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=FR9024N?> डेटा पत्रक पीडीएफ

FR9024N pdf
IRFR/U9024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
www.DataSQhegdet4U.com Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55 ––– ––– V VGS = 0V, ID = -250µA
––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.175 VGS = -10V, ID = -6.6A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
2.5 ––– ––– S VDS = -25V, ID = -7.2A†
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250
VDS = -44V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 19
ID = -7.2A
––– ––– 5.1
––– ––– 10
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13 „†
––– 13 –––
VDD = -28V
––– 55 ––– ns ID = -7.2A
––– 23 –––
RG = 24
––– 37 –––
RD = 3.7Ω, See Fig. 10 „†
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact…
D
S
––– 350 –––
VGS = 0V
––– 170 ––– pF VDS = -25V
––– 92 –––
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -11
––– ––– -44
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V „
––– 47 71 ns TJ = 25°C, IF = -7.2A
––– 84 130 nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 2.8mH
RG = 25, IAS = -6.6A. (See Figure 12)
ƒ ISD -6.6A, di/dt 240A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
† Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994

विन्यास 10 पेज
डाउनलोड[ FR9024N Datasheet.PDF ]


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